Plasma wave resonances in Graphene channels under controlled gate for high frequency applications

Abstract Several devices based on 2D materials have become interesting for high-frequency
applications especially sensors, amplifiers and modulators of Terahertz frequencies.
Moreover, High Electron Mobility Transistors (HEMTs) emerged as important
competitors owing to the high quality resonances associated with plasma-wave
oscillations in channel. In this study, plasma wave a Graphene
channel were studied. The calculations
were our small-signal model therefore can determine resonances
and voltage gain Monolayer Bilayer graphene channels. influence of
the dielectric substrates between gate channel, impurity depth positions
and channel (InGaAs, graphene) dynamic
behavior Graphene transistor was investigated. This analysis extract the
high performance conditions HEMTs amplifiers.